| PART |
Description |
Maker |
| HYS72T1G242EP-3-C HYS72T1G242EP-3.7-C HYS72T1G242E |
240-Pin Dual Die Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T32000HP |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T512022HR-3.7-A HYS72T512022HR-3S-A HYS72T512 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T128020HP-3S-A |
240-Pin Registered DDR2 SDRAM Modules
|
Infineon Technologies Corporation
|
| HYB18T1G400BF |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T256000ER-3.7-B HYS72T256000ER-5-B HYS72T2560 |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64020HR-2.5-A HYS72T64020HR-3-A HYS72T64020H |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
|
| HYS72T64000HR HYS72T64000HR-3-A HYS72T64000HR-3.7- |
240-Pin Registered DDR2 SDRAM Modules
|
Qimonda AG
http://
|
| HYS72T256023 HYS72T512022HR-3.7-A |
240-Pin Registered DDR2 SDRAM Modules 512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
Qimonda AG
|
| M393T6553BZ3-CD5_CC M393T2950BG0-CD5_CC M393T2950B |
DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 70287-1015 0702871015 |
2.54mm (.100) Pitch C-Grid庐 Header, Breakaway, Dual Row, Vertical, with Retention Pin, 34 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 34 Circuits, 6.10mm (.240) Mating Pin Length, Tin (Sn) Plating
|
Molex Electronics Ltd.
|
| 0702871206 70287-1206 |
2.54mm (.100) Pitch C-Grid? Header, Breakaway, Dual Row, Vertical, with Retention Pin, 24 Circuits, 6.10mm (.240) Mating Pin Length, 0.76μm (30μ) Gold (Au) Selective Plating
MOLEX Connector
|
Molex Electronics Ltd.
|
